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| ECR Plasma Process Systems |
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Seki Technotron offers ECR (Electron Cyclotron Resonance) plasma
process technology targeted to processes of diamond-related materials and compound
semiconductors.
The ECR effect occurs when magnetized electrons are excited with an electric field
at resonance with the electron cyclotron frequency. This resonant absorption of
microwave energy produces the much higher density plasma at the lower pressures
in comparison with RF plasma and ICP (induction coupled plasma). Our unique ECR
plasma system with permanent magnet enables unrivaled, high-quality processes
of diamond-related materials and compound semiconductors at low temperatures.
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 System
Specifications |
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- High density ECR plasma source with a proprietary
“permanent magnet” and microwave generator,
- Corrosive and toxic gas compatible:
CVD: Silane- and hydrocarbon-based,
Etching: Chlorine-, fluorine- and methane/hydrogen-based.
- The wafer size is available in 75 - 300mm. |
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CIRRUS Series Catalogs |
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| Applications |
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- DLC (diamond-like carbon) and NCD (nano-crystalline
diamond) [CVD]
The excellent quality diamond-related films prepared with low temperatures
and high density plasma enable the wide variety of applications such as data storage,
printing, MEMS, industrial coatings, optical coatings, and so on. |
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-Si3N4, SiO2, SiOxNy and a-Si [CVD]
The films with highly conformal, tunable index, stress controllable and low hydrogen
content are perfectly suitable for leading edge LSI and optoelectronics device
fabrication. |
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-Compound semiconductor etching
The controllable isotropic and anisotropic etching with damage free enables
etched profile control of GaAs, AlGaAs, InP and InGaAsP, which are essential for
fabrication of laser diodes and OEIC (opto-electronic integrated circuits) for
optical communication and computing. |
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- Low Stress SiN Films Deposited on GaAs Using Low
Temperature ECR PECVD
- Silicon niteride films deposited at substrate temperatures
<100? in a permanent magnet Electron Cycltron Resonance Plasma. |
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